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HAT2208R
Silicon N Channel Power MOS FET Power Switching
REJ03G1595-0200 Rev.2.00 Oct 15, 2007
Features
* * * * * High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 19.0 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PRSP0008DD-D (Package name: SOP-8)
5 76 34 4 G 5678 DDDD 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
8
12
SSS 123
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 ch-a Note3 Tch Tstg
Note1
Ratings 30 20 9 72 9 9 8.1 2.0 62.5 150 -55 to +150
Unit V V A A A A mJ W C/W C C
Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
REJ03G1595-0200 Rev.2.00 Oct 15, 2007 Page 1 of 7
HAT2208R
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 -- -- 1.0 -- -- 9.5 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 19 24 16 630 160 56 1.1 4.4 2.2 1.4 5.8 15 34 3.5 0.84 18 Max -- 0.1 1 2.5 24 35 -- -- -- -- -- -- -- -- -- -- -- -- 1.10 -- Unit V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 4.5 A, VGS = 10 V Note4 ID = 4.5 A, VGS = 4.5 V Note4 ID = 4.5 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 9 A VGS = 10 V, ID = 4.5 A VDD 10 V RL = 2.22 Rg = 4.7 IF = 9 A, VGS = 0 Note4 IF = 9 A, VGS = 0 diF/ dt = 100 A/ s
REJ03G1595-0200 Rev.2.00 Oct 15, 2007 Page 2 of 7
HAT2208R
Main Characteristics
Power vs. Temperature Derating
4.0 500 Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW 10 s 100
10 s 10 1 m 0 s s
Maximum Safe Operation Area
Channel Dissipation Pch (W)
3.0
Drain Current ID (A)
10
DC
PW
Op era tio
=1
0m s
1 Note 0s 4 )
2.0
n(
1
PW
1.0
0.1
Operation in this area is limited by RDS(on) Ta = 25C 1 shot Pulse
0
50
100
150
200
0.01 0.1
0.3
1
3
10
30
100
Ambient Temperature Ta (C)
Drain to Source Voltage VDS (V)
Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm)
Typical Output Characteristics
10 10 V 4.5 V 10
Typical Transfer Characteristics
VDS = 10 V Pulse Test
3.0 V
Pulse Test
6
Drain Current ID (A)
Drain Current ID (A)
8
8
2.8 V
6 Tc = 75C
4
4
VGS = 2.6 V
2
2
25C -25C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Static Drain to Source on State Resistance vs. Drain Current
Drain to Source Voltage VDS(on) (mV)
250 Pulse Test 200
Drain to Source On State Resistance RDS(on) (m)
100 Pulse Test 50 VGS = 4.5 V 20 10 V 10 5
150 ID = 5 A
100
50
2A
2 1 0.1
0
4
8
12
16
20
1
10
100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
REJ03G1595-0200 Rev.2.00 Oct 15, 2007 Page 3 of 7
HAT2208R
Static Drain to Source on State Resistance vs. Temperature
100 Pulse Test 80
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
1000
100
Tc = -25C
60 ID = 1 A, 2 A, 5 A VGS = 4.5 V 20 1 A, 2 A, 5 A
10 V
10 25C 1 75C VDS = 10 V Pulse Test 0.1 0.3 1 3 10 30 100
40
0 -25
0
25
50
75
100 125 150
Case Temperature Tc (C)
Drain Current ID (A)
Body-Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
100 10000 3000 1000
Typical Capacitance vs. Drain to Source Voltage
50
Capacitance C (pF)
Ciss 300 100 30 10 0 5 10 15 20 Coss Crss VGS = 0 f = 1 MHz 25 30
20 di/dt = 100 A/s VGS = 0, Ta = 25C 1 10 100
10 0.1
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
ID = 9 A VDD = 25 V 10 V 5V VDS VGS
Switching Characteristics
Gate to Source Voltage VGS (V)
20 1000 VGS = 10 V, VDS = 10 V Rg = 4.7 , duty 1 %
50
40
16
Switching Time t (ns)
100 td(off)
30
12
20 VDD = 25 V 10 V 5V
8
10 tr 1 0.1
td(on) tf
10
4 0 20
0
4
8
12
16
1
10
100
Gate Charge Qg (nc)
Drain Current ID (A)
REJ03G1595-0200 Rev.2.00 Oct 15, 2007 Page 4 of 7
HAT2208R
Reverse Drain Current vs. Source to Drain Voltage
10
Maximum Avalanche Energy vs. Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
20 IAP = 9 A VDD = 15 V duty < 0.1 % Rg 50
Reverse Drain Current IDR (A)
8
10 V 5V VGS = 0 V
16
6
12
4
8
2 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
4 0 25
50
75
100
125
150
Source to Drain Voltage VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1 0.5
0.2
0.1
0.1 0.05 0.02
0.01
0.01
0.001
1s
t ho
pu
lse
ch - f(t) = s (t) x ch - f ch - f = 100C/W, Ta = 25C When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
PDM PW T
D=
PW T
0.0001 10
100
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (s) Avalanche Test Circuit
L IAP Monitor Rg Vin 15 V 50 VDD D. U. T VDD IAP VDS ID
Avalanche Waveform
EAR = 1 2 L * IAP2 * VDSS VDSS - VDD V(BR)DSS
VDS Monitor
0
REJ03G1595-0200 Rev.2.00 Oct 15, 2007 Page 5 of 7
HAT2208R
Switching Time Test Circuit
Vin Monitor Rg D.U.T. RL VDS = 10 V 90% td(on) 90% td(off) tf Vin Vout Vin 10 V 10% 10% 10% Vout Monitor
Switching Time Waveform
90%
tr
REJ03G1595-0200 Rev.2.00 Oct 15, 2007 Page 6 of 7
HAT2208R
Package Dimensions
Package Name SOP-8 JEITA Package Code P-SOP8-3.95 x 4.9-1.27 RENESAS Code PRSP0008DD-D Previous Code FP-8DAV MASS[Typ.] 0.085g
*1 D
F
8
5
*2 E HE
bp
Index mark
1
Z e
4
* 3 bp xM
c
Terminal cross section (Ni/Pd/Au plating)
NOTE) 1. DIMENSIONS "*1(Nom)" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET.
Reference Dimension in Millimeters Symbol
Min
L1
L
D E A2 A1 A bp b1 c c1 HE e x y Z L L1
Nom Max 4.90 5.3 3.95
A
0.10 0.14 0.25 1.75 0.34 0.40 0.46 0.15 0.20 0.25
A1
y
Detail F
0 8 5.80 6.10 6.20 1.27 0.25 0.1 0.75 0.40 0.60 1.27 1.08
Ordering Information
Part Name HAT2208R-EL-E Note: Quantity 2500 pcs Taping Shipping Container
For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
REJ03G1595-0200 Rev.2.00 Oct 15, 2007 Page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com ) 5. 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(c) 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
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